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China RMLV0416EGSB-4S2#HA1 IC SRAM 4MBIT PARALLEL 44TSOP II Renesas Electronics America Inc.

RMLV0416EGSB-4S2#HA1 IC SRAM 4MBIT PARALLEL 44TSOP II Renesas Electronics America Inc.

Geheugentype: Vluchtig
Geheugenformaat: SRAM
Technologie: SRAM
China BR24S256F-WE2 IC EEPROM 256KBIT I2C 8SOP Rohm halfgeleider

BR24S256F-WE2 IC EEPROM 256KBIT I2C 8SOP Rohm halfgeleider

Geheugentype: Niet-vluchtig
Geheugenformaat: EEPROM
Technologie: EEPROM
China IS43LR16200D-6BL-TR IC DRAM 32MBIT PARALLEL 60TFBGA ISSI, Integrated Silicon Solution Inc.

IS43LR16200D-6BL-TR IC DRAM 32MBIT PARALLEL 60TFBGA ISSI, Integrated Silicon Solution Inc.

Geheugentype: Vluchtig
Geheugenformaat: BORREL
Technologie: SDRAM - Mobiele LPDDR
China MT29F128G08AMCABH2-10:A IC FLASH 128GBIT PAR 100TBGA Micron Technology Inc.

MT29F128G08AMCABH2-10:A IC FLASH 128GBIT PAR 100TBGA Micron Technology Inc.

Geheugentype: Niet-vluchtig
Geheugenformaat: Flash
Technologie: NAND FLITS -
China MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1,2GHz 78FBGA Micron Technology Inc.

MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1,2GHz 78FBGA Micron Technology Inc.

Geheugentype: Vluchtig
Geheugenformaat: BORREL
Technologie: SDRAM - DDR4
China MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

Geheugentype: Vluchtig
Geheugenformaat: BORREL
Technologie: SDRAM - DDR
China SST25VF010A-33-4I-QAE IC FLASH 1MBIT SPI 33MHZ 8WSON Microchip technologie

SST25VF010A-33-4I-QAE IC FLASH 1MBIT SPI 33MHZ 8WSON Microchip technologie

Geheugentype: Niet-vluchtig
Geheugenformaat: Flash
Technologie: Flash
China MT28EW128ABA1HPC-0SIT IC FLASH 128MBIT PARALLEL 64LBGA Micron Technology Inc.

MT28EW128ABA1HPC-0SIT IC FLASH 128MBIT PARALLEL 64LBGA Micron Technology Inc.

Geheugentype: Niet-vluchtig
Geheugenformaat: Flash
Technologie: FLITS - NOCH
China IS62WV5128BLL-55HLI IC SRAM 4MBIT PARALLEL 32STSOP I ISSI, Integrated Silicon Solution Inc.

IS62WV5128BLL-55HLI IC SRAM 4MBIT PARALLEL 32STSOP I ISSI, Integrated Silicon Solution Inc.

Geheugentype: Vluchtig
Geheugenformaat: SRAM
Technologie: SRAM - Asynchroon
China IS62C1024AL-35TLI IC SRAM 1MBIT PARALLEL 32TSOP I ISSI, Integrated Silicon Solution Inc.

IS62C1024AL-35TLI IC SRAM 1MBIT PARALLEL 32TSOP I ISSI, Integrated Silicon Solution Inc.

Geheugentype: Vluchtig
Geheugenformaat: SRAM
Technologie: SRAM - Asynchroon
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